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| 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications * * * * * High voltage: VCEO = -50 V High current: IC = -150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2SC4738F Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -50 -50 -5 -150 -30 100 125 -55 to 125 Unit V V V mA mW mW C C Marking Type Name hFE Rank SY 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-04-12 1/3 2SA1832FT Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Condition VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -6 V, IB = -2 mA IC = -100 mA, IB = -10 mA VCE = -10 V, IC = -1 mA VCB = -10 V, IE = 0, f = 1 MHz Min 120 80 Typ. -0.1 4 Max -0.1 -0.1 400 -0.3 7 V MHz pF Unit A A Note: hFE Classification ( ) Marking symbol Y (Y): 120 to 140, GR (G): 200 to 400 2000-04-12 2/3 2SA1832FT IC - VCE -240 Common emitter -2.0 Ta = 25C -1.5 -160 -1.0 -100 -1000 Common emitter -500 VCE = -6 V -300 IB - VBE Collector current IC (mA) Base current IB (A) -50 -30 Ta = 100C -10 -5 -3 25 -25 -80 -0.5 IB = -0.2 mA 0 0 0 -2 -4 -6 -8 Collector-emitter voltage VCE (V) -1 -0.5 hFE - IC 2000 -0.3 0 Common emitter VCE = -6 V VCE = -1 V -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 DC current gain hFE Base-emitter voltage VBE (V) 1000 500 300 Ta = 100C 25 100 50 30 -0.1 -0.3 -1 -3 -10 -25 fT - IC 3000 (MHz) 1000 500 300 Common emitter VCE = -10 V Ta = 25C Collector current IC (mA) Transition frequency fT -30 -100 100 50 30 Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) - IC -0.5 -0.3 Common emitter IC/IB = 10 -0.1 -0.05 -0.03 Ta = 100C 10 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC 25 -25 (mA) -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 120 PC - Ta (mW) Collector power dissipation PC Collector current IC (mA) 100 Base-emitter saturation voltage VBE (sat) (V) VBE (sat) - IC -5 -3 Common emitter IC/IB = 10 Ta = 25C 80 60 -1 -0.5 -0.3 40 20 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 0 0 20 40 60 80 100 120 140 Collector current IC (mA) Ambient temperature Ta (C) 2000-04-12 3/3 |
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